solid state devices, inc. 14830 valley view blvd * la mirada, ca 90638 phone: (562) 404 - 7855 * fax: (562) 404 - 1773 ssdi@ssdi - power.com * www.ssdi - power.com designer?s data sheet to - 254 and to - 254z note 1: maximum current limited by package co nfiguration sf f 8 5 n0 6 m sf f 8 5 n0 6 z 5 5 amp (note 1) / 6 0 volts 7 mo n - channel trench gate mosfet features: trench gate technology for high cell density lowest on - resistance in the industry enhanced operating temperature range hermetically sealed, isolated package low total gate charge fast switching enhanced r eplace ment for ir fp064 tx, txv, s - level screening available improved (r ds(on) q g ) figure of merit maximum ratings symbol value units drain - source voltage v dss 6 0 v gate ? source voltage v gs 20 v max. continuous drain current ( package limited) @ t c = 25oc @ t c = 125oc i d 1 i d 2 55 (note 1) 5 5 (note 1) a max. instantaneous drain current (tj limited) @ t c = 25oc @ t c = 125oc i d 3 i d 4 175 75 a max. avalanche current @ l= 0.1 mh i ar 7 5 a repetitive avalanche energy @ l= 0.1 mh e ar 28 0 mj total power dissipation @ t c = 25oc p d 2 1 0 w operating & storage temperature t op & t stg - 55 to +175 oc maximum thermal resistance (junction to case) r 0 jc 0 .7 (typ 0.55) oc/w to - 254 (m) pin 1 pin 3 pin 2 to - 254z (z) pin 3 pin 2 pin 1 note: all specifica tions are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. data sheet #: FT0020a doc
solid state devices, inc. 14830 valley view blvd * la mirada, ca 90638 phone: (562) 404 - 7855 * fax: (562) 404 - 1773 ssdi@ssdi - power.com * www.ssdi - power.com sf f 8 5 n0 6 m sf f 8 5 n0 6 z electrical characteristics 4 / symbol min typ max units drain to source breakdown voltage v gs = 0 v , i d = 250a bv dss 6 0 ?? ?? v drain to source on state r esistance v gs = 1 0 v , i d = 30a, tj = 25 o c v gs = 4.5v , i d = 20a, tj = 25 o c v gs = 1 0 v , i d = 30a, tj = 1 25 o c v gs = 1 0 v , i d = 30a, tj = 200 o c r ds(on) ?? ?? ?? ?? 5.0 7.0 9.0 10.5 7 .0 ?? ?? ?? mo gate threshold voltage v ds = v g s , i d = 250a v gs(th) 1 .0 ?? 3 .0 v gate to source leakage v gs = 20v i gss ?? ?? 100 na zero gate voltage drain current v ds = 48 v , v gs = 0v, t j = 25 o c v ds = 48 v , v gs = 0v, t j = 1 25 o c v ds = 48 v , v gs = 0v, t j = 200 o c i dss ?? ?? ?? ?? 1 50 1 0 a a m a forward transconductance v ds = 15 v , i d = 30a, t j = 25 o c g fs 25 ?? ?? mho total gate charge gate to source charge gate to drain charge v gs = 1 0v v d s = 3 0v i d = 110 a q g q gs q gd ?? ?? ?? 15 0 30 5 0 225 ?? ?? nc turn on delay time rise time turn off delay time fall time v gs = 1 0v v d s = 3 0v i d = 110 a r g = 2.5 o t d ( on ) t r t d ( off ) t f ?? ?? ?? ?? 25 135 8 5 15 0 3 5 20 0 12 5 225 nsec diode forward voltage i f = 110 a, v gs = 0 v v sd ?? 1. 1 1. 5 v diode reverse recovery time peak reverse recovery current reverse recovery charge i f = 10 0 a, di/dt = 100a/usec t rr i rm(re c) q rr ?? 75 2.5 0. 1 1 2 5 5 0 . 2 5 nsec a c input capacitance output capacitance reverse transfer capacitance v gs = 0v v d s = 2 5 v f = 1 mhz c iss c oss c rss ?? ?? ?? 7 5 00 1 0 50 70 0 ?? ?? ?? pf notes: * pulse test: pulse width = 300sec, duty cycle = 2% . 1 / for ordering information, price, and availability contact factory. 2 / screening per mil - prf - 19500 . 3 / for package outlines contact factory. 4 / unless otherwise specified, all electrical characteristics @25 o c. available part numbers: consult factory pin assignment (standard) package drain source gate to - 2 5 4 (m) pin 1 pin 2 pin 3 to - 25 4z (z) pin 1 pin 2 pin 3 note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. data sheet #: FT0020a doc
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